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BSS138P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BSS138P

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.35 W

Предельно допустимое напряжение сток-исток |Uds|: 60 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 1.5 V

Максимально допустимый постоянный ток стока |Id|: 0.36 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 1.6 Ohm

Тип корпуса: TO236AB

Аналог (замена) для BSS138P

 

 

BSS138P Datasheet (PDF)

8.1. bss138 d87z bss138 l99z.pdf Size:99K _fairchild_semi

BSS138P
BSS138P

October 2005BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize

8.2. bss138.pdf Size:121K _fairchild_semi

BSS138P
BSS138P

October 2005BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize

 8.3. bss138w.pdf Size:212K _fairchild_semi

BSS138P
BSS138P

December 2010BSS138WN-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode field effect RDS(ON) = 3.5 @ VGS = 10V, ID = 0.22Atransistor. These products have been designed to RDS(ON) = 6.0 @ VGS = 4.5V, ID = 0.22Aminimize on-state resistance while provide rugged, High density cell design for extremely

8.4. bss138k.pdf Size:288K _fairchild_semi

BSS138P
BSS138P

May 2010BSS138KN-Channel Logic Level Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant Green Compound ESD HBM=2000V as per JEDEC A114A ; ESD CDM = 2000V as per JEDEC C101CDS

 8.5. bss138bks.pdf Size:348K _nxp

BSS138P
BSS138P

BSS138BKS60 V, 320 mA dual N-channel Trench MOSFETRev. 1 12 August 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up t

8.6. bss138aka.pdf Size:247K _nxp

BSS138P
BSS138P

BSS138AKA60 V, single N-channel Trench MOSFET29 April 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltag

8.7. bss138 1.pdf Size:89K _diodes

BSS138P
BSS138P

BSS138N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

8.8. bss138ta bss138tc.pdf Size:98K _diodes

BSS138P
BSS138P

BSS138N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

8.9. bss138.pdf Size:381K _diodes

BSS138P
BSS138P

BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification Low Input Capacitance Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Matte Tin Finish A

8.10. bss138w.pdf Size:89K _diodes

BSS138P
BSS138P

BSS138WN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish

8.11. bss138dw.pdf Size:109K _diodes

BSS138P
BSS138P

BSS138DWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound (Note 6). UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensi

8.12. bss138.pdf Size:91K _infineon

BSS138P
BSS138P

BSS 138SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0VPin 1 Pin 2 Pin 3G S DType VDS ID RDS(on) Package MarkingBSS 138 50 V 0.22 A 3.5 SOT-23 SSsType Ordering Code Tape and Reel InformationBSS 138 Q67000-S566 E6327BSS 138 Q67000-S216 E6433Maximum RatingsParameter Symbol Values UnitDrain source voltage VD

8.13. bss138n.pdf Size:210K _infineon

BSS138P
BSS138P

BSS138N SIPMOS Small-Signal-TransistorProduct SummaryFeaturesV 60 VDS N-channelR 3.5DS(on),max Enhancement modeI 0.23 AD Logic level dv /dt rated Pb-free lead-plating; RoHS compliantPG-SOT-23 Qualified according to AEC Q101Type Package Tape and Reel MarkingBSS138N PG-SOT-23 L6327: 3000 SKsBSS138N PG-SOT-23 L6433: 10000 SKsParameter

8.14. bss138w.pdf Size:351K _infineon

BSS138P
BSS138P

BSS138W SIPMOS Small-Signal-TransistorProduct SummaryFeaturesV 60 VDS N-channelR 3.5DS(on),max Enhancement modeI 0.28 AD Logic level dv /dt rated Pb-free lead-plating; RoHS compliantPG-SOT-323 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21Type Package Tape and Reel MarkingBSS138W PG-SOT-323 H SWs6327: 3

8.15. bss138lt3 bss138lt3g.pdf Size:95K _onsemi

BSS138P
BSS138P

BSS138LT1Power MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inhttp://onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelLow Voltage Applica

8.16. bss138lt1.pdf Size:127K _onsemi

BSS138P
BSS138P

BSS138LT1Preferred DevicePower MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inhttp://onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelL

8.17. bss138.pdf Size:155K _utc

BSS138P
BSS138P

UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology andfeatures low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequenc

8.18. bss138.pdf Size:1161K _jiangsu

BSS138P
BSS138P

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 3.5@10V50 V220mA1. GATE 6@4.5V2. SOURCE 3. DRAIN FEATURE APPLICATION Direct Logic-Level Interface: TTL/CMOS High density cell design for extremely low RDS(on) Rugged and Relaible Drivers: Relays

8.19. bss138.pdf Size:1007K _lge

BSS138P
BSS138P

BSS138 SOT-23 Plastic-Encapsulate NMOSFETS ID SOT-23 V(BR)DSS RDS(on)MAX 3.5@10V50V220mA1. GATE6@4.5V2. SOURCE3. DRAINFEATURE APPLICATION Direct Logic-Level Interface: TTL/CMOS High density cell design for extremely low RDS(on) Rugged and Relaible Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Sys

8.20. bss138.pdf Size:221K _wietron

BSS138P
BSS138P

BSS138Small Signal MOSFETN-Channel3 DRAINSOT-23Features:31*Low On-Resistance : 3.5 GATE1 *Low Input Capacitance: 40PF2*Low Out put Capacitance : 12PF 2SOURCE*Low Threshole :1 .5V*Fast Switching Speed : 20nsApplication:* DC to DC Converter* Cellular & PCMCIA Card* Cordless Telephone* Power Management in Portable and Battery etc.Maximum Ratings (TA

8.21. bss138w.pdf Size:811K _wietron

BSS138P
BSS138P

BSS138W3 DRAINN-Channel POWER MOSFETP b Lead(Pb)-Free3121Description:GATE* Typical applications are dcdc converters, SOT-323(SC-70) power management in portable and batterypowered2 SOURCE products such as computers, printers, PCMCIA cards, cellular and cordless telephones.Features:* Simple Drive Requirement* Small Package OutlineMaximum Ratings (TA=2

8.22. bss138lt1.pdf Size:391K _willas

BSS138P
BSS138P

FM120-M WILLASTHRUBSS 8LT1200 mAmps, 50 VoltsPower MOSFETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optim

8.23. bss138wt1.pdf Size:416K _willas

BSS138P
BSS138P

FM120-M WILLASBSS138WT1THRU200 mAmps, 50 VoltsPower MOSFETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optim

8.24. bss138.pdf Size:671K _shenzhen

BSS138P
BSS138P

Shenzhen Tuofeng Semiconductor Technology Co., Ltd BSS138BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. Th

8.25. bss138c3.pdf Size:609K _cystek

BSS138P
BSS138P

Spec. No. : C834C3 Issued Date : 2012.06.25 CYStech Electronics Corp. Revised Date : 2014.08.20 Page No. : 1/9 50V N-Channel Enhancement Mode MOSFET BVDSS 50V BSS138C3 ID 250mA RDSON@VGS=10V, ID=220mA 1.1(typ) RDSON@VGS=4.5V, ID=220mA 1.3(typ) RDSON@VGS=2.5V,ID=220mA 1.7(typ) RDSON@VGS=4V,ID=100mA Features 1.3(typ) Simple drive requirement RDSON@VGS=2.

8.26. bss138.pdf Size:915K _blue-rocket-elect

BSS138P
BSS138P

BSS138 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features SOT-23 Low RDS(on),rugged and reliable, compact industry standard SOT-23 surface mount package. / Applications

8.27. lbss138lt1g s-lbss138lt1g.pdf Size:540K _lrc

BSS138P
BSS138P

LESHAN RADIO COMPANY, LTD.Power MOSFETLBSS138LT1G200 mAmps, 50 Volts S-LBSS138LT1GNChannel SOT233Typical applications are dcdc converters, power management inportable and batterypowered products such as computers, printers,1PCMCIA cards, cellular and cordless telephones.2 Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applicat

8.28. lbss138wt1g s-lbss138wt1g.pdf Size:560K _lrc

BSS138P
BSS138P

LBSS138WT1GS-LBSS138WT1GPower MOSFET200 mAmps, 50 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low threshold voltage (VGS(th):

8.29. bss138 kss138.pdf Size:234K _kexin

BSS138P
BSS138P

N-Channel MOSFETBSS138 (KSS138) 3 D 12 G S

8.30. bss138-3.pdf Size:1105K _kexin

BSS138P
BSS138P

SMD Type MOSFETN-Channel MOSFETBSS138 (KSS138)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 50V ID = 200 mA (VGS = 10V)1 2+0.02+0.10.15 -0.02 RDS(ON) 3.5 (VGS = 10V) 0.95 -0.1+0.11.9 -0.2 Fast Switching Speed Low On-Resistance1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Sym

8.31. bss138.pdf Size:802K _kexin

BSS138P
BSS138P

SMD Type MOSFETN-Channel MOSFETBSS138 (KSS138)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 50V ID = 200 mA (VGS = 10V)1 2 RDS(ON) 3.5 (VGS = 10V)+0.1+0.050.95-0.1 0.1-0.01+0.1 Fast Switching Speed1.9-0.1 Low On-Resistance1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol R

8.32. bss138e-3.pdf Size:1197K _kexin

BSS138P
BSS138P

SMD Type MOSFETN-Channel MOSFETBSS138E (KSS138E)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 50V ID = 300 mA (VGS = 10V)1 2+0.02+0.1 RDS(ON) 2.5 (VGS = 10V)0.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 3.5 (VGS =2.5V) Low On-Resistance ESD Rating: 1.5KV HBM1. Gate2. Source3. Drain Absolute M

8.33. bss138e.pdf Size:1172K _kexin

BSS138P
BSS138P

SMD Type MOSFETN-Channel MOSFETBSS138E (KSS138E)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 50V ID = 300 mA (VGS = 10V)1 2 RDS(ON) 2.5 (VGS = 10V)+0.1+0.050.95-0.1 0.1-0.01+0.1 RDS(ON) 3.5 (VGS =2.5V)1.9-0.1 Low On-Resistance ESD Rating: 1.5KV HBM1. Gate2. Source3. Drain Absolute Maximum

8.34. bss138-g.pdf Size:130K _comchip

BSS138P
BSS138P

MOSFETBSS138-G N-Channel 50-V(D-S) MOSFETRoHS DeviceFeatures1 : Gate SOT-23 -High density cell design for extremely low RDS(ON).2 : Source3 : Drain -Rugged and Reliable.0.118(3.00)0.110(2.80)30.055(1.40)0.047(1.20)Mechanical data1 2 -Case: SOT-23, molded plastic.0.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, 0.006(0.15)method 2026.0.

8.35. gsmbss138.pdf Size:432K _globaltech_semi

BSS138P
BSS138P

GSMBSS138 50V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS138 is the N-Channel enhancement 50V/0.2A , RDS(ON)=3.5@VGS=5V mode field effect transistors are produced using 50V/0.2A , RDS(ON)=10@VGS=2.75V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to min

8.36. bss138lt1g.pdf Size:551K _mei

BSS138P
BSS138P

Lead FreeRoHS CompliantMEIBSS138LT1GNChannel SOT233Typical applications are dcdc converters, power management inportable and batterypowered products such as computers, printers,1PCMCIA cards, cellular and cordless telephones.2 Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applicationsSOT 23 (TO236AB) Miniatu

8.37. bss138.pdf Size:1761K _anbon

BSS138P
BSS138P

BSS138 N-Channel 50V(D-S) MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: SSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Max Unit Drain-So

8.38. bss138.pdf Size:1761K _fms

BSS138P
BSS138P

BSS138 N-Channel 50V(D-S) MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: SSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Max Unit Drain-So

8.39. bss138.pdf Size:720K _huashuo

BSS138P
BSS138P

BSS138 N-Ch 50V Fast Switching MOSFETs Description Product Summary VDS 50 V The BSS138 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 3.4 gate charge for most of the synchronous buck converter applications. ID 230 mA The BSS138 meet the RoHS and Green Product requirement with full function reliability approved. Green

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