BSS138PW MOSFET Datasheet: N-Ch, 60V, 0.32A. Full specification with pinout and replacement list

BSS138PW Specs and Replacement

Type Designator: BSS138PW

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.26 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: SC70

BSS138PW substitution

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BSS138PW datasheet

..1. Size:899K nxp
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BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFE... See More ⇒

7.1. Size:915K nxp
bss138ps.pdf pdf_icon

BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Tr... See More ⇒

7.2. Size:172K nxp
bss138p.pdf pdf_icon

BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET te... See More ⇒

7.3. Size:1855K cn tech public
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