BSS138PW
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSS138PW
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.26
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.32
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6
Ohm
Package:
SC70
BSS138PW
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSS138PW
Datasheet (PDF)
..1. Size:899K nxp
bss138pw.pdf
BSS138PW60 V, 320 mA N-channel Trench MOSFETRev. 1 2 November 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFE
7.1. Size:915K nxp
bss138ps.pdf
BSS138PS60 V, 320 mA dual N-channel Trench MOSFETRev. 1 2 November 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Tr
7.2. Size:172K nxp
bss138p.pdf
BSS138P60 V, 360 mA N-channel Trench MOSFETRev. 1 2 November 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET te
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