BUK6207-55C PDF and Equivalents Search

 

BUK6207-55C Specs and Replacement

Type Designator: BUK6207-55C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 158 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: DPAK

BUK6207-55C substitution

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BUK6207-55C datasheet

 ..1. Size:160K  philips
 buk6207-55c.pdf pdf_icon

BUK6207-55C

BUK6207-55C N-channel TrenchMOS intermediate level FET Rev. 2 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high... See More ⇒

 6.1. Size:363K  philips
 buk6207-30c.pdf pdf_icon

BUK6207-55C

BUK6207-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒

 6.2. Size:363K  nxp
 buk6207-30c.pdf pdf_icon

BUK6207-55C

BUK6207-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒

 8.1. Size:359K  philips
 buk6209-30c.pdf pdf_icon

BUK6207-55C

BUK6209-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe... See More ⇒

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Detailed specifications: BSS84AK, BSS84AKM, BSS84AKS, BSS84AKT, BSS84AKV, BSS84AKW, BSS87, BST82, 7N60, BUK6209-30C, BUK6210-55C, BUK6211-75C, BUK6212-40C, BUK6213-30A, BUK6213-30C, BUK6215-75C, BUK6217-55C

Keywords - BUK6207-55C MOSFET specs

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