BUK6207-55C - описание и поиск аналогов

 

BUK6207-55C. Аналоги и основные параметры

Наименование производителя: BUK6207-55C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 158 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0078 Ohm

Тип корпуса: DPAK

Аналог (замена) для BUK6207-55C

- подборⓘ MOSFET транзистора по параметрам

 

BUK6207-55C даташит

 ..1. Size:160K  philips
 buk6207-55c.pdf pdf_icon

BUK6207-55C

BUK6207-55C N-channel TrenchMOS intermediate level FET Rev. 2 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 6.1. Size:363K  philips
 buk6207-30c.pdf pdf_icon

BUK6207-55C

BUK6207-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 6.2. Size:363K  nxp
 buk6207-30c.pdf pdf_icon

BUK6207-55C

BUK6207-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 8.1. Size:359K  philips
 buk6209-30c.pdf pdf_icon

BUK6207-55C

BUK6209-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BSS84AK , BSS84AKM , BSS84AKS , BSS84AKT , BSS84AKV , BSS84AKW , BSS87 , BST82 , 7N60 , BUK6209-30C , BUK6210-55C , BUK6211-75C , BUK6212-40C , BUK6213-30A , BUK6213-30C , BUK6215-75C , BUK6217-55C .

History: NTMFS4941N | BLS6G3135S-120

 

 

 

 

↑ Back to Top
.