BUK6510-75C Specs and Replacement
Type Designator: BUK6510-75C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 77 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm
Package: TO220AB
- MOSFET ⓘ Cross-Reference Search
BUK6510-75C datasheet
..1. Size:213K philips
buk6510-75c.pdf 
BUK6510-75C N-channel TrenchMOS FET Rev. 02 13 December 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performanc... See More ⇒
9.1. Size:369K philips
buk652r7-30c.pdf
BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒
9.2. Size:202K philips
buk655r0-75c.pdf
BUK655R0-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance auto... See More ⇒
9.3. Size:182K philips
buk653r2-55c.pdf
BUK653R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒
9.4. Size:364K philips
buk653r5-55c.pdf
BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev. 1 27 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high ... See More ⇒
9.5. Size:187K philips
buk654r6-55c.pdf
BUK654R6-55C N-channel TrenchMOS intermediate level FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicati... See More ⇒
9.6. Size:375K philips
buk652r3-40c.pdf
BUK652R3-40C N-channel TrenchMOS intermediate level FET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p... See More ⇒
9.7. Size:368K philips
buk653r7-30c.pdf
BUK653R7-30C N-channel TrenchMOS intermediate level FET Rev. 3 13 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high ... See More ⇒
9.8. Size:177K philips
buk654r0-75c.pdf
BUK654R0-75C N-channel TrenchMOS FET Rev. 03 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut... See More ⇒
9.9. Size:183K philips
buk652r0-30c.pdf
BUK652R0-30C N-channel TrenchMOS intermediate level FET Rev. 01 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒
9.10. Size:194K philips
buk654r8-40c.pdf
BUK654R8-40C N-channel TrenchMOS intermediate level FET Rev. 03 12 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high... See More ⇒
9.11. Size:185K philips
buk6507-55c.pdf
BUK6507-55C N-channel TrenchMOS logic and standard level FET Rev. 01 12 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in... See More ⇒
9.12. Size:176K philips
buk6507-75c.pdf
BUK6507-75C N-channel TrenchMOS FET Rev. 02 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo... See More ⇒
9.13. Size:349K philips
buk652r6-40c.pdf
BUK652R6-40C N-channel TrenchMOS FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut... See More ⇒
9.14. Size:369K nxp
buk652r7-30c.pdf
BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒
Detailed specifications: BUK6228-55C
, BUK6246-75C
, BUK624R5-30C
, BUK625R0-40C
, BUK625R2-30C
, BUK626R2-40C
, BUK6507-55C
, BUK6507-75C
, IRF3205
, BUK652R0-30C
, BUK652R1-30C
, BUK652R3-40C
, BUK652R6-40C
, BUK653R2-55C
, BUK653R3-30C
, BUK653R4-40C
, BUK653R5-55C
.
History: STU307S
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