BUK6510-75C
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK6510-75C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 158
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 77
A
Tj ⓘ - Максимальная температура канала: 175
°C
Qg ⓘ -
Общий заряд затвора: 81
nC
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0104
Ohm
Тип корпуса:
TO220AB
Аналог (замена) для BUK6510-75C
-
подбор ⓘ MOSFET транзистора по параметрам
BUK6510-75C
Datasheet (PDF)
..1. Size:213K philips
buk6510-75c.pdf 
BUK6510-75CN-channel TrenchMOS FETRev. 02 13 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performanc
9.1. Size:369K philips
buk652r7-30c.pdf 
BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
9.2. Size:202K philips
buk655r0-75c.pdf 
BUK655R0-75CN-channel TrenchMOS FETRev. 02 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance auto
9.3. Size:182K philips
buk653r2-55c.pdf 
BUK653R2-55CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
9.4. Size:364K philips
buk653r5-55c.pdf 
BUK653R5-55CN-channel TrenchMOS intermediate level FETRev. 1 27 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
9.5. Size:187K philips
buk654r6-55c.pdf 
BUK654R6-55CN-channel TrenchMOS intermediate level FETRev. 02 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicati
9.6. Size:375K philips
buk652r3-40c.pdf 
BUK652R3-40CN-channel TrenchMOS intermediate level FETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
9.7. Size:368K philips
buk653r7-30c.pdf 
BUK653R7-30CN-channel TrenchMOS intermediate level FETRev. 3 13 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
9.8. Size:177K philips
buk654r0-75c.pdf 
BUK654R0-75CN-channel TrenchMOS FETRev. 03 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut
9.9. Size:183K philips
buk652r0-30c.pdf 
BUK652R0-30CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
9.10. Size:194K philips
buk654r8-40c.pdf 
BUK654R8-40CN-channel TrenchMOS intermediate level FETRev. 03 12 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
9.11. Size:185K philips
buk6507-55c.pdf 
BUK6507-55CN-channel TrenchMOS logic and standard level FETRev. 01 12 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in
9.12. Size:176K philips
buk6507-75c.pdf 
BUK6507-75CN-channel TrenchMOS FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo
9.13. Size:349K philips
buk652r6-40c.pdf 
BUK652R6-40CN-channel TrenchMOS FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut
9.14. Size:369K nxp
buk652r7-30c.pdf 
BUK652R7-30CN-channel TrenchMOS intermediate level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
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History: AOK66613
| BUK6C2R1-55C
