BUK6607-55C Specs and Replacement
Type Designator: BUK6607-55C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: D2PAK
- MOSFET ⓘ Cross-Reference Search
BUK6607-55C datasheet
..1. Size:355K philips
buk6607-55c.pdf 
BUK6607-55C N-channel TrenchMOS logic and standard level FET Rev. 1 14 October 2010 Product data sheet 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for u... See More ⇒
..2. Size:926K nxp
buk6607-55c.pdf
BUK6607-55C N-channel TrenchMOS logic and standard level FET Rev. 1 14 October 2010 Product data sheet 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for u... See More ⇒
6.1. Size:358K philips
buk6607-75c.pdf
BUK6607-75C N-channel TrenchMOS FET Rev. 2 17 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom... See More ⇒
6.2. Size:929K nxp
buk6607-75c.pdf
BUK6607-75C N-channel TrenchMOS FET Rev. 2 17 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom... See More ⇒
9.1. Size:180K philips
buk662r7-55c.pdf
BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒
9.2. Size:201K philips
buk663r5-30c.pdf
BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒
9.3. Size:371K philips
buk661r9-40c.pdf
BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p... See More ⇒
9.4. Size:198K philips
buk6610-75c.pdf
BUK6610-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom... See More ⇒
9.5. Size:219K philips
buk663r5-55c.pdf
BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high... See More ⇒
9.6. Size:353K philips
buk662r5-30c.pdf
BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high ... See More ⇒
9.7. Size:395K philips
buk661r8-30c.pdf
BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 02 28 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒
9.8. Size:360K philips
buk663r7-75c.pdf
BUK663R7-75C N-channel TrenchMOS FET Rev. 2 15 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut... See More ⇒
9.9. Size:216K philips
buk664r4-55c.pdf
BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 03 21 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat... See More ⇒
9.10. Size:374K philips
buk663r2-40c.pdf
BUK663R2-40C N-channel TrenchMOS intermediate level FET Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high ... See More ⇒
9.11. Size:912K nxp
buk662r7-55c.pdf
BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒
9.12. Size:769K nxp
buk663r5-30c.pdf
BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒
9.13. Size:943K nxp
buk661r9-40c.pdf
BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p... See More ⇒
9.14. Size:767K nxp
buk6610-75c.pdf
BUK6610-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom... See More ⇒
9.15. Size:750K nxp
buk661r8-30c.pdf
BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 2.1 18 August 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high... See More ⇒
9.16. Size:932K nxp
buk663r7-75c.pdf
BUK663R7-75C N-channel TrenchMOS FET Rev. 2 15 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut... See More ⇒
9.17. Size:772K nxp
buk664r4-55c.pdf
BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 03 21 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat... See More ⇒
9.18. Size:946K nxp
buk663r2-40c.pdf
BUK663R2-40C N-channel TrenchMOS intermediate level FET Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high ... See More ⇒
9.19. Size:927K nxp
buk664r6-40c.pdf
BUK664R6-40C N-channel TrenchMOS intermediate level FET Rev. 2 17 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high... See More ⇒
9.20. Size:937K nxp
buk662r4-40c.pdf
BUK662R4-40C N-channel TrenchMOS FET Rev. 2 2 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom... See More ⇒
Detailed specifications: BUK653R3-30C, BUK653R4-40C, BUK653R5-55C, BUK653R7-30C, BUK654R0-75C, BUK654R6-55C, BUK654R8-40C, BUK655R0-75C, IRFP260N, BUK6607-75C, BUK6610-75C, BUK661R6-30C, BUK661R8-30C, BUK661R9-40C, BUK662R4-40C, BUK662R5-30C, BUK662R7-55C
Keywords - BUK6607-55C MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
