Справочник MOSFET. BUK6607-55C

 

BUK6607-55C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK6607-55C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 158 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для BUK6607-55C

   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK6607-55C Datasheet (PDF)

 ..1. Size:355K  philips
 buk6607-55c.pdf pdf_icon

BUK6607-55C

BUK6607-55CN-channel TrenchMOS logic and standard level FETRev. 1 14 October 2010 Product data sheet1. Product profile1.1 General descriptionLogic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for u

 ..2. Size:926K  nxp
 buk6607-55c.pdf pdf_icon

BUK6607-55C

BUK6607-55CN-channel TrenchMOS logic and standard level FETRev. 1 14 October 2010 Product data sheet1. Product profile1.1 General descriptionLogic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for u

 6.1. Size:358K  philips
 buk6607-75c.pdf pdf_icon

BUK6607-55C

BUK6607-75CN-channel TrenchMOS FETRev. 2 17 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

 6.2. Size:929K  nxp
 buk6607-75c.pdf pdf_icon

BUK6607-55C

BUK6607-75CN-channel TrenchMOS FETRev. 2 17 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BUK653R3-30C , BUK653R4-40C , BUK653R5-55C , BUK653R7-30C , BUK654R0-75C , BUK654R6-55C , BUK654R8-40C , BUK655R0-75C , 10N60 , BUK6607-75C , BUK6610-75C , BUK661R6-30C , BUK661R8-30C , BUK661R9-40C , BUK662R4-40C , BUK662R5-30C , BUK662R7-55C .

 

 
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