BUK661R6-30C PDF and Equivalents Search

 

BUK661R6-30C Specs and Replacement

Type Designator: BUK661R6-30C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 306 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm

Package: D2PAK

BUK661R6-30C substitution

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BUK661R6-30C datasheet

 7.1. Size:371K  philips
buk661r9-40c.pdf pdf_icon

BUK661R6-30C

BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p... See More ⇒

 7.2. Size:395K  philips
buk661r8-30c.pdf pdf_icon

BUK661R6-30C

BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 02 28 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒

 7.3. Size:943K  nxp
buk661r9-40c.pdf pdf_icon

BUK661R6-30C

BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p... See More ⇒

 7.4. Size:750K  nxp
buk661r8-30c.pdf pdf_icon

BUK661R6-30C

BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 2.1 18 August 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high... See More ⇒

Detailed specifications: BUK653R7-30C, BUK654R0-75C, BUK654R6-55C, BUK654R8-40C, BUK655R0-75C, BUK6607-55C, BUK6607-75C, BUK6610-75C, IRF3710, BUK661R8-30C, BUK661R9-40C, BUK662R4-40C, BUK662R5-30C, BUK662R7-55C, BUK663R2-40C, BUK663R5-30C, BUK663R5-55C

Keywords - BUK661R6-30C MOSFET specs

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