BUK661R6-30C Specs and Replacement
Type Designator: BUK661R6-30C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 306 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: D2PAK
BUK661R6-30C substitution
- MOSFET ⓘ Cross-Reference Search
BUK661R6-30C datasheet
buk661r9-40c.pdf
BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p... See More ⇒
buk661r8-30c.pdf
BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 02 28 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig... See More ⇒
buk661r9-40c.pdf
BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p... See More ⇒
buk661r8-30c.pdf
BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 2.1 18 August 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high... See More ⇒
Detailed specifications: BUK653R7-30C, BUK654R0-75C, BUK654R6-55C, BUK654R8-40C, BUK655R0-75C, BUK6607-55C, BUK6607-75C, BUK6610-75C, IRF3710, BUK661R8-30C, BUK661R9-40C, BUK662R4-40C, BUK662R5-30C, BUK662R7-55C, BUK663R2-40C, BUK663R5-30C, BUK663R5-55C
Keywords - BUK661R6-30C MOSFET specs
BUK661R6-30C cross reference
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