Справочник MOSFET. BUK661R6-30C

 

BUK661R6-30C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK661R6-30C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 306 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0016 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для BUK661R6-30C

   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK661R6-30C Datasheet (PDF)

 7.1. Size:371K  philips
 buk661r9-40c.pdf pdf_icon

BUK661R6-30C

BUK661R9-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.2. Size:395K  philips
 buk661r8-30c.pdf pdf_icon

BUK661R6-30C

BUK661R8-30CN-channel TrenchMOS intermediate level FETRev. 02 28 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.3. Size:943K  nxp
 buk661r9-40c.pdf pdf_icon

BUK661R6-30C

BUK661R9-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.4. Size:750K  nxp
 buk661r8-30c.pdf pdf_icon

BUK661R6-30C

BUK661R8-30CN-channel TrenchMOS intermediate level FETRev. 2.1 18 August 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BUK653R7-30C , BUK654R0-75C , BUK654R6-55C , BUK654R8-40C , BUK655R0-75C , BUK6607-55C , BUK6607-75C , BUK6610-75C , P55NF06 , BUK661R8-30C , BUK661R9-40C , BUK662R4-40C , BUK662R5-30C , BUK662R7-55C , BUK663R2-40C , BUK663R5-30C , BUK663R5-55C .

History: IXFN70N60Q2 | IXFN80N60P3

 

 
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