Справочник MOSFET. BUK661R6-30C

 

BUK661R6-30C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK661R6-30C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 306 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 229 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0016 Ohm
   Тип корпуса: D2PAK
     - подбор MOSFET транзистора по параметрам

 

BUK661R6-30C Datasheet (PDF)

 7.1. Size:371K  philips
 buk661r9-40c.pdf pdf_icon

BUK661R6-30C

BUK661R9-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.2. Size:395K  philips
 buk661r8-30c.pdf pdf_icon

BUK661R6-30C

BUK661R8-30CN-channel TrenchMOS intermediate level FETRev. 02 28 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.3. Size:943K  nxp
 buk661r9-40c.pdf pdf_icon

BUK661R6-30C

BUK661R9-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.4. Size:750K  nxp
 buk661r8-30c.pdf pdf_icon

BUK661R6-30C

BUK661R8-30CN-channel TrenchMOS intermediate level FETRev. 2.1 18 August 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

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History: BUK7508-55 | BUK7510-55AL

 

 
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