BUK662R4-40C Datasheet and Replacement
Type Designator: BUK662R4-40C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 263 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: D2PAK
BUK662R4-40C substitution
BUK662R4-40C Datasheet (PDF)
buk662r4-40c.pdf
BUK662R4-40CN-channel TrenchMOS FETRev. 2 2 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom
buk662r7-55c.pdf
BUK662R7-55CN-channel TrenchMOS intermediate level FETRev. 01 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
buk662r5-30c.pdf
BUK662R5-30CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
buk662r7-55c.pdf
BUK662R7-55CN-channel TrenchMOS intermediate level FETRev. 01 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
Datasheet: BUK654R8-40C , BUK655R0-75C , BUK6607-55C , BUK6607-75C , BUK6610-75C , BUK661R6-30C , BUK661R8-30C , BUK661R9-40C , IRFP250N , BUK662R5-30C , BUK662R7-55C , BUK663R2-40C , BUK663R5-30C , BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C .
History: MDS1652ERUH | AONS36335 | SVFP7N70MJ | BUK78150-55A
Keywords - BUK662R4-40C MOSFET datasheet
BUK662R4-40C cross reference
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BUK662R4-40C lookup
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BUK662R4-40C replacement
History: MDS1652ERUH | AONS36335 | SVFP7N70MJ | BUK78150-55A
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