Справочник MOSFET. BUK662R4-40C

 

BUK662R4-40C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK662R4-40C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 263 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 199 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
   Тип корпуса: D2PAK
     - подбор MOSFET транзистора по параметрам

 

BUK662R4-40C Datasheet (PDF)

 ..1. Size:937K  nxp
 buk662r4-40c.pdf pdf_icon

BUK662R4-40C

BUK662R4-40CN-channel TrenchMOS FETRev. 2 2 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

 7.1. Size:180K  philips
 buk662r7-55c.pdf pdf_icon

BUK662R4-40C

BUK662R7-55CN-channel TrenchMOS intermediate level FETRev. 01 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.2. Size:353K  philips
 buk662r5-30c.pdf pdf_icon

BUK662R4-40C

BUK662R5-30CN-channel TrenchMOS intermediate level FETRev. 2 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 7.3. Size:912K  nxp
 buk662r7-55c.pdf pdf_icon

BUK662R4-40C

BUK662R7-55CN-channel TrenchMOS intermediate level FETRev. 01 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

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Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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