BUK662R4-40C - описание и поиск аналогов

 

BUK662R4-40C. Аналоги и основные параметры

Наименование производителя: BUK662R4-40C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 263 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm

Тип корпуса: D2PAK

Аналог (замена) для BUK662R4-40C

- подборⓘ MOSFET транзистора по параметрам

 

BUK662R4-40C даташит

 ..1. Size:937K  nxp
 buk662r4-40c.pdf pdf_icon

BUK662R4-40C

BUK662R4-40C N-channel TrenchMOS FET Rev. 2 2 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

 7.1. Size:180K  philips
 buk662r7-55c.pdf pdf_icon

BUK662R4-40C

BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.2. Size:353K  philips
 buk662r5-30c.pdf pdf_icon

BUK662R4-40C

BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 7.3. Size:912K  nxp
 buk662r7-55c.pdf pdf_icon

BUK662R4-40C

BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev. 01 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BUK654R8-40C , BUK655R0-75C , BUK6607-55C , BUK6607-75C , BUK6610-75C , BUK661R6-30C , BUK661R8-30C , BUK661R9-40C , IRFB4115 , BUK662R5-30C , BUK662R7-55C , BUK663R2-40C , BUK663R5-30C , BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C .

 

 

 

 

↑ Back to Top
.