All MOSFET. BUK6E2R3-40C Datasheet

 

BUK6E2R3-40C Datasheet and Replacement


   Type Designator: BUK6E2R3-40C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 306 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: I2PAK
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BUK6E2R3-40C Datasheet (PDF)

 ..1. Size:373K  philips
buk6e2r3-40c.pdf pdf_icon

BUK6E2R3-40C

BUK6E2R3-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.1. Size:181K  philips
buk6e2r0-30c.pdf pdf_icon

BUK6E2R3-40C

BUK6E2R0-30CN-channel TrenchMOS intermediate level FETRev. 02 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 9.1. Size:350K  philips
buk6e3r4-40c.pdf pdf_icon

BUK6E2R3-40C

BUK6E3R4-40CN-channel TrenchMOS intermediate level FETRev. 3 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.2. Size:181K  philips
buk6e3r2-55c.pdf pdf_icon

BUK6E2R3-40C

BUK6E3R2-55CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK7P65W | CHM85A3PAGP | ALD1103DB | SQ9407EY-T1 | SFFX054Z

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