BUK6E2R3-40C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK6E2R3-40C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 306 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 175 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
Тип корпуса: I2PAK
- подбор MOSFET транзистора по параметрам
BUK6E2R3-40C Datasheet (PDF)
buk6e2r3-40c.pdf

BUK6E2R3-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p
buk6e2r0-30c.pdf

BUK6E2R0-30CN-channel TrenchMOS intermediate level FETRev. 02 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
buk6e3r4-40c.pdf

BUK6E3R4-40CN-channel TrenchMOS intermediate level FETRev. 3 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high
buk6e3r2-55c.pdf

BUK6E3R2-55CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AP4435GYT-HF | AP4407GP | STH6N100 | 2N7272H1 | STH250N55F3-6 | VP2206N3 | AP4409AGEM
History: AP4435GYT-HF | AP4407GP | STH6N100 | 2N7272H1 | STH250N55F3-6 | VP2206N3 | AP4409AGEM



Список транзисторов
Обновления
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