BUK7227-100B MOSFET Datasheet: N-Ch, 100V, 48A. Full specification with pinout and replacement list

BUK7227-100B Specs and Replacement

Type Designator: BUK7227-100B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 185 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: DPAK

BUK7227-100B substitution

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BUK7227-100B datasheet

..1. Size:892K nxp
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BUK7227-100B N-channel TrenchMOS standard level FET Rev. 02 17 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1... See More ⇒

8.1. Size:193K philips
buk7226-75a.pdf pdf_icon

BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in ... See More ⇒

8.2. Size:283K philips
buk7226-75a 01.pdf pdf_icon

BUK7226-75A TrenchMOS standard level FET Rev. 01 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7226-75A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Stan... See More ⇒

8.3. Size:802K nxp
buk7222-55a.pdf pdf_icon

BUK7222-55A N-channel TrenchMOS standard level FET Rev. 2 23 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2... See More ⇒