BUK7227-100B
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7227-100B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 167
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 48
A
Tjⓘ - Maximum Junction Temperature: 185
°C
Qgⓘ - Total Gate Charge: 37
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027
Ohm
Package:
DPAK
BUK7227-100B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7227-100B
Datasheet (PDF)
..1. Size:892K nxp
buk7227-100b.pdf
BUK7227-100BN-channel TrenchMOS standard level FETRev. 02 17 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1
8.1. Size:193K philips
buk7226-75a.pdf
BUK7226-75AN-channel TrenchMOS standard level FETRev. 02 22 February 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in
8.2. Size:283K philips
buk7226-75a 01.pdf
BUK7226-75ATrenchMOS standard level FETRev. 01 09 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7226-75A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Stan
8.3. Size:802K nxp
buk7222-55a.pdf
BUK7222-55AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
8.4. Size:825K nxp
buk7225-55a.pdf
BUK7225-55AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
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