BUK7227-100B Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK7227-100B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 167 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 48 A
Tjⓘ - Максимальная температура канала: 185 °C
Qgⓘ - Общий заряд затвора: 37 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm
Тип корпуса: DPAK
- подбор MOSFET транзистора по параметрам
BUK7227-100B Datasheet (PDF)
buk7227-100b.pdf

BUK7227-100BN-channel TrenchMOS standard level FETRev. 02 17 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1
buk7226-75a.pdf

BUK7226-75AN-channel TrenchMOS standard level FETRev. 02 22 February 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in
buk7226-75a 01.pdf

BUK7226-75ATrenchMOS standard level FETRev. 01 09 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7226-75A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Stan
buk7222-55a.pdf

BUK7222-55AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: 2SK685 | P5102FM | 3SK232 | IRFS331 | AOC2802 | IRFS251
History: 2SK685 | P5102FM | 3SK232 | IRFS331 | AOC2802 | IRFS251



Список транзисторов
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