BUK7506-55B MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7506-55B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 254 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 64 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220AB
BUK7506-55B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7506-55B Datasheet (PDF)
buk7506-55a buk7606-55a.pdf
BUK7506-55A; BUK7606-55ATrenchMOS standard level FETRev. 02 03 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7506-55A in SOT78 (TO-220AB)BUK7606-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q10
buk7506-55a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7506-55A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology which features ID Drain current (DC) 75 Avery low on-state resis
buk7506-55a.pdf
isc N-Channel MOSFET Transistor BUK7506-55AFEATURESStatic drain-source on-resistance:RDS(on) 6.3mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive and general purpose power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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