All MOSFET. BUK7506-55B Datasheet

 

BUK7506-55B MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK7506-55B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 254 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm

Package: TO220AB

BUK7506-55B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7506-55B Datasheet (PDF)

1.1. buk7506-55a buk7606-55a.pdf Size:320K _philips

BUK7506-55B
BUK7506-55B

BUK7506-55A; BUK7606-55A TrenchMOS™ standard level FET Rev. 02 — 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant

1.2. buk7506-55a 1.pdf Size:51K _philips

BUK7506-55B
BUK7506-55B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7506-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology which features ID Drain current (DC) 75 A very low on-state resistance. It

 2.1. buk7506-75b buk7606-75b.pdf Size:322K _philips

BUK7506-55B
BUK7506-55B

BUK75/7606-75B TrenchMOS™ standard level FET Rev. 02 — 20 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK7506-75B in SOT78 (TO-220AB) BUK7606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resista

2.2. buk7506-30 1.pdf Size:49K _philips

BUK7506-55B
BUK7506-55B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7506-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V ’trench’ technology. The device ID Drain current (DC) 75 A features very low on-state resistanc

Datasheet: BUK7237-55A , BUK7240-100A , BUK724R5-30C , BUK725R0-40C , BUK7275-100A , BUK7277-55A , BUK7504-40A , BUK7506-55A , IRFP260N , BUK7506-75B , BUK7507-30B , BUK7507-55B , BUK7508-40B , BUK7508-55A , BUK7509-55A , BUK7509-75A , BUK7510-100B .

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