BUK7506-55B - аналоги, параметры транзистора - Справочник транзисторов

BUK7506-55B даташит

4.1. Size:320K philips
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BUK7506-55A; BUK7606-55A TrenchMOS standard level FET Rev. 02 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q10

4.2. Size:51K philips
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Philips Semiconductors Product specification TrenchMOS transistor BUK7506-55A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology which features ID Drain current (DC) 75 A very low on-state resis

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isc N-Channel MOSFET Transistor BUK7506-55A FEATURES Static drain-source on-resistance RDS(on) 6.3m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive and general purpose power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

Другие MOSFET... BUK7237-55A , BUK7240-100A , BUK724R5-30C , BUK725R0-40C , BUK7275-100A , BUK7277-55A , BUK7504-40A , BUK7506-55A , AO3407 , BUK7506-75B , BUK7507-30B , BUK7507-55B , BUK7508-40B , BUK7508-55A , BUK7509-55A , BUK7509-75A , BUK7510-100B .