BUK7510-100B MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7510-100B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 80 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO220AB
BUK7510-100B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7510-100B Datasheet (PDF)
buk7510-55al.pdf
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BUK7510-55ALN-channel TrenchMOS standard level FETRev. 03 4 August 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
buk7510-30 1.pdf
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Philips Semiconductors Product specification TrenchMOS transistor BUK7510-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 75 Afeatures very low on-state
buk7515-100a.pdf
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BUK7515-100AN-channel TrenchMOS standard level FETRev. 3 21 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F
buk7516-55a buk7616-55a buk7616-55a.pdf
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BUK7516-55A; BUK7616-55ATrenchMOS standard level FETRev. 01 18 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7516-55A in SOT78 (TO-220AB)BUK7616-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec
buk75150 buk76150 55a-01.pdf
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BUK75150-55A;BUK76150-55ATrenchMOS standard level FETRev. 01 10 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK75150-55A in SOT78 (TO-220AB)BUK76150-55A in SOT404 (D 2-PAK).2. Features TrenchMOS
buk7514-55 2.pdf
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Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 68 Afeatures very low on-state
buk7515-100a 1.pdf
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Philips Semiconductors Product specification TrenchMOS transistor BUK7515-100A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 100 Vtrench technology which features ID Drain current (DC) 75 Avery low on-state res
buk7514-30 1.pdf
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Philips Semiconductors Product specification TrenchMOS transistor BUK7514-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 69 Afeatures very low on-state
buk75150-55a buk76150-55a.pdf
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BUK75/76150-55ATrenchMOS standard level FETRev. 02 25 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive (GPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible.1.3 Applicat
buk7518-55 2.pdf
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Philips Semiconductors Product specification TrenchMOS transistor BUK7518-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 57 Afeatures very low on-state
buk7518-30 1.pdf
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Philips Semiconductors Product specification TrenchMOS transistor BUK7518-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 55 Afeatures very low on-state
buk7514-55a buk7614-55a.pdf
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Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard level FET BUK7614-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 73 AUsing trench tec
buk7514-60e.pdf
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BUK7514-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repet
buk751r6-30e.pdf
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BUK751R6-30EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe
buk751r8-40e.pdf
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BUK751R8-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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