All MOSFET. BUK7510-100B Datasheet

 

BUK7510-100B MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK7510-100B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 300 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 75 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 80 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
   Package: TO220AB

 BUK7510-100B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7510-100B Datasheet (PDF)

 6.1. Size:210K  philips
buk7510-55al.pdf

BUK7510-100B
BUK7510-100B

BUK7510-55ALN-channel TrenchMOS standard level FETRev. 03 4 August 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

 6.2. Size:50K  philips
buk7510-30 1.pdf

BUK7510-100B
BUK7510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK7510-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 75 Afeatures very low on-state

 8.1. Size:218K  philips
buk7515-100a.pdf

BUK7510-100B
BUK7510-100B

BUK7515-100AN-channel TrenchMOS standard level FETRev. 3 21 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

 8.2. Size:306K  philips
buk7516-55a buk7616-55a buk7616-55a.pdf

BUK7510-100B
BUK7510-100B

BUK7516-55A; BUK7616-55ATrenchMOS standard level FETRev. 01 18 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7516-55A in SOT78 (TO-220AB)BUK7616-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec

 8.3. Size:302K  philips
buk75150 buk76150 55a-01.pdf

BUK7510-100B
BUK7510-100B

BUK75150-55A;BUK76150-55ATrenchMOS standard level FETRev. 01 10 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK75150-55A in SOT78 (TO-220AB)BUK76150-55A in SOT404 (D 2-PAK).2. Features TrenchMOS

 8.4. Size:52K  philips
buk7514-55 2.pdf

BUK7510-100B
BUK7510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 68 Afeatures very low on-state

 8.5. Size:50K  philips
buk7515-100a 1.pdf

BUK7510-100B
BUK7510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK7515-100A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 100 Vtrench technology which features ID Drain current (DC) 75 Avery low on-state res

 8.6. Size:50K  philips
buk7514-30 1.pdf

BUK7510-100B
BUK7510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 69 Afeatures very low on-state

 8.7. Size:299K  philips
buk75150-55a buk76150-55a.pdf

BUK7510-100B
BUK7510-100B

BUK75/76150-55ATrenchMOS standard level FETRev. 02 25 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive (GPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible.1.3 Applicat

 8.8. Size:52K  philips
buk7518-55 2.pdf

BUK7510-100B
BUK7510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK7518-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 57 Afeatures very low on-state

 8.9. Size:48K  philips
buk7518-30 1.pdf

BUK7510-100B
BUK7510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK7518-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 55 Afeatures very low on-state

 8.10. Size:68K  philips
buk7514-55a buk7614-55a.pdf

BUK7510-100B
BUK7510-100B

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard level FET BUK7614-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 73 AUsing trench tec

 8.11. Size:207K  nxp
buk7514-60e.pdf

BUK7510-100B
BUK7510-100B

BUK7514-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repet

 8.12. Size:211K  nxp
buk751r6-30e.pdf

BUK7510-100B
BUK7510-100B

BUK751R6-30EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

 8.13. Size:211K  nxp
buk751r8-40e.pdf

BUK7510-100B
BUK7510-100B

BUK751R8-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

Datasheet: BUK7506-55B , BUK7506-75B , BUK7507-30B , BUK7507-55B , BUK7508-40B , BUK7508-55A , BUK7509-55A , BUK7509-75A , IRF460 , BUK7510-55AL , BUK7511-55A , BUK7511-55B , BUK7513-75B , BUK7514-55A , BUK75150-55A , BUK7515-100A , BUK7516-55A .

 

 
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