BUK764R0-75C
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK764R0-75C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 333
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 142
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004
Ohm
Package:
D2PAK
BUK764R0-75C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK764R0-75C
Datasheet (PDF)
..1. Size:191K philips
buk764r0-75c.pdf
BUK764R0-75CN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut
..2. Size:813K nxp
buk764r0-75c.pdf
BUK764R0-75CN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut
5.1. Size:101K philips
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buk764r0-55b.pdf
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