Справочник MOSFET. BUK764R0-75C

 

BUK764R0-75C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK764R0-75C
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 333 W
   Предельно допустимое напряжение сток-исток |Uds|: 75 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 100 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 142 nC
   Сопротивление сток-исток открытого транзистора (Rds): 0.004 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для BUK764R0-75C

 

 

BUK764R0-75C Datasheet (PDF)

 ..1. Size:191K  philips
buk764r0-75c.pdf

BUK764R0-75C
BUK764R0-75C

BUK764R0-75CN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut

 ..2. Size:813K  nxp
buk764r0-75c.pdf

BUK764R0-75C
BUK764R0-75C

BUK764R0-75CN-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut

 5.1. Size:101K  philips
buk754r0-55b buk764r0-55b.pdf

BUK764R0-75C
BUK764R0-75C

BUK754R0-55B; BUK764R0-55BN-channel TrenchMOS standard level FETRev. 04 4 October 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard l

 5.2. Size:210K  nxp
buk764r0-40e.pdf

BUK764R0-75C
BUK764R0-75C

BUK764R0-40EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 5.3. Size:846K  nxp
buk764r0-55b.pdf

BUK764R0-75C
BUK764R0-75C

BUK764R0-55BN-channel TrenchMOS standard level FETRev. 5 22 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFS3006-7P | STB80NF55-08T4 | 13N40

 

 
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