BUK78150-55A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK78150-55A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15
Ohm
Package:
SC73
BUK78150-55A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK78150-55A
Datasheet (PDF)
..1. Size:926K nxp
buk78150-55a.pdf 
BUK78150-55AN-channel TrenchMOS standard level FETRev. 02 16 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F
3.1. Size:54K philips
buk78150-55 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK78150-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current 5.5 Athe device fea
9.1. Size:98K philips
buk7880-55a.pdf
BUK7880-55AN-channel TrenchMOS standard level FETRev. 01 1 November 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP General Purpose Automotive (GPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 150 C rated Standard level compatible
9.2. Size:53K philips
buk7880-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7880-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technolgy ID Drain current 7.5 Athe device featu
9.3. Size:55K philips
buk7840-55 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7840-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current 10.7 Athe device fea
9.4. Size:58K philips
buk7830-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7830-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 Atrench tech
9.5. Size:758K nxp
buk7880-55a.pdf
BUK7880-55AN-channel TrenchMOS standard level FET19 June 2015 Product data sheet1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicatio
9.6. Size:976K cn vbsemi
buk7880-55a.pdf
BUK7880-55Awww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, un
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
