BUK78150-55A - описание и поиск аналогов

 ..1. Size:926K  nxp
 buk78150-55a.pdf 

BUK78150-55A N-channel TrenchMOS standard level FET Rev. 02 16 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F

 3.1. Size:54K  philips
 buk78150-55 1.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK78150-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current 5.5 A the device fea

 9.1. Size:98K  philips
 buk7880-55a.pdf 

BUK7880-55A N-channel TrenchMOS standard level FET Rev. 01 1 November 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 150 C rated Standard level compatible

 9.2. Size:53K  philips
 buk7880-55 2.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK7880-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technolgy ID Drain current 7.5 A the device featu

 9.3. Size:55K  philips
 buk7840-55 1.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK7840-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current 10.7 A the device fea

 9.4. Size:58K  philips
 buk7830-30 1.pdf 

Philips Semiconductors Product specification TrenchMOS transistor BUK7830-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 A trench tech

 9.5. Size:758K  nxp
 buk7880-55a.pdf 

BUK7880-55A N-channel TrenchMOS standard level FET 19 June 2015 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicatio

 9.6. Size:976K  cn vbsemi
 buk7880-55a.pdf 

BUK7880-55A www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, un