All MOSFET. BUK7909-75AIE Datasheet

 

BUK7909-75AIE MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK7909-75AIE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 272 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 121 nC

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO2205

BUK7909-75AIE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7909-75AIE Datasheet (PDF)

1.1. buk7109-75aie buk7909-75aie.pdf Size:331K _philips

BUK7909-75AIE
BUK7909-75AIE

BUK71/7909-75AIE TrenchPLUS standard level FET Rev. 01 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. Product availability: BUK7109-75AIE in SOT426 (D2-PAK) BUK7909-75A

1.2. buk7109-75ate buk7909-75ate.pdf Size:346K _philips

BUK7909-75AIE
BUK7909-75AIE

BUK71/7909-75ATE TrenchPLUS standard level FET Rev. 01 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and a TrenchPLUS diode for temperature sensing. Product availability: BUK7109-75ATE in SOT426 (D2-PAK) BUK7909-75ATE in SOT2

 4.1. buk7107-40atc buk7907-40atc.pdf Size:346K _philips

BUK7909-75AIE
BUK7909-75AIE

BUK71/7907-40ATC TrenchPLUS standard level FET Rev. 01 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS diodes for clamping, (ESD) protection and temperature sensing. Product availability: BUK7107-40ATC in SOT426 (D2-P

4.2. buk7107-55aie buk7907-55aie.pdf Size:326K _philips

BUK7909-75AIE
BUK7909-75AIE

BUK71/7907-55AIE TrenchPLUS standard level FET Rev. 01 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. Product availability: BUK7107-55AIE in SOT426 (D2-PAK) BUK7907-55

 4.3. buk7108-40aie buk7908-40aie.pdf Size:332K _philips

BUK7909-75AIE
BUK7909-75AIE

BUK71/7908-40AIE TrenchPLUS standard level FET Rev. 02 24 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. 1.2 Features ESD protection Q101 compliant Integrated current

4.4. buk7105-40aie buk7905-40aie.pdf Size:143K _philips

BUK7909-75AIE
BUK7909-75AIE

BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 04 6 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. 1.2 Features ESD protection Q101 compliant Integrated current

 4.5. buk7105-40ate buk7905-40ate.pdf Size:341K _philips

BUK7909-75AIE
BUK7909-75AIE

BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 20 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring both very low on-state resistance and TrenchPLUS diodes for temperature sensing and ESD protection. Product availability: BUK7105-40ATE in SOT426 (D2-PAK)

4.6. buk7905 40ai-01.pdf Size:121K _philips

BUK7909-75AIE
BUK7909-75AIE

BUK7905-40AI TrenchPLUS standard level FET Rev. 01 9 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and TrenchPLUS current sensing. 1.2 Features Integrated current sensor Standard level compatible. 1.3 Applications Variable

4.7. buk7907-55ate.pdf Size:330K _philips

BUK7909-75AIE
BUK7909-75AIE

BUK7907-55ATE TrenchPLUS standard level FET Rev. 02 16 July 2002 Product data M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance, and TrenchPLUS diodes for Electrostatic Discharge (ESD) and temperature sensing. Product availability: BUK7907-55ATE in SOT263B. 2. Features

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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