All MOSFET. BUK7909-75ATE Datasheet

 

BUK7909-75ATE Datasheet and Replacement


   Type Designator: BUK7909-75ATE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO2205
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BUK7909-75ATE Datasheet (PDF)

 ..1. Size:346K  philips
buk7109-75ate buk7909-75ate.pdf pdf_icon

BUK7909-75ATE

BUK71/7909-75ATETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and a TrenchPLUSdiode for temperature sensing.Product availability:BUK7109-75ATE in SOT426 (D2-PAK)BUK7909-75ATE

 3.1. Size:331K  philips
buk7109-75aie buk7909-75aie.pdf pdf_icon

BUK7909-75ATE

BUK71/7909-75AIETrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7109-75AIE in SOT426 (D2-PAK)BUK7

 8.1. Size:330K  philips
buk7907-55ate.pdf pdf_icon

BUK7909-75ATE

BUK7907-55ATETrenchPLUS standard level FETRev. 02 16 July 2002 Product dataM3D7451. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on state resistance, and TrenchPLUSdiodes for Electrostatic Discharge (ESD) and temperature sensing.Product availability:BUK7907-55ATE in SOT263B.2. Fe

 8.2. Size:143K  philips
buk7105-40aie buk7905-40aie.pdf pdf_icon

BUK7909-75ATE

BUK71/7905-40AIETrenchPLUS standard level FETRev. 04 6 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRFP151 | SML5040AN | STA6611 | DAMH450N100 | BUK661R9-40C | BF998WR | IXTP1N80

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