Справочник MOSFET. BUK7909-75ATE

 

BUK7909-75ATE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK7909-75ATE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 272 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO2205

 Аналог (замена) для BUK7909-75ATE

 

 

BUK7909-75ATE Datasheet (PDF)

 ..1. Size:346K  philips
buk7109-75ate buk7909-75ate.pdf

BUK7909-75ATE
BUK7909-75ATE

BUK71/7909-75ATETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and a TrenchPLUSdiode for temperature sensing.Product availability:BUK7109-75ATE in SOT426 (D2-PAK)BUK7909-75ATE

 3.1. Size:331K  philips
buk7109-75aie buk7909-75aie.pdf

BUK7909-75ATE
BUK7909-75ATE

BUK71/7909-75AIETrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7109-75AIE in SOT426 (D2-PAK)BUK7

 8.1. Size:330K  philips
buk7907-55ate.pdf

BUK7909-75ATE
BUK7909-75ATE

BUK7907-55ATETrenchPLUS standard level FETRev. 02 16 July 2002 Product dataM3D7451. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on state resistance, and TrenchPLUSdiodes for Electrostatic Discharge (ESD) and temperature sensing.Product availability:BUK7907-55ATE in SOT263B.2. Fe

 8.2. Size:143K  philips
buk7105-40aie buk7905-40aie.pdf

BUK7909-75ATE
BUK7909-75ATE

BUK71/7905-40AIETrenchPLUS standard level FETRev. 04 6 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c

 8.3. Size:346K  philips
buk7107-40atc buk7907-40atc.pdf

BUK7909-75ATE
BUK7909-75ATE

BUK71/7907-40ATCTrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUSdiodes for clamping, (ESD) protection and temperature sensing.Product availability:BUK7107-40ATC in SOT42

 8.4. Size:121K  philips
buk7905 40ai-01.pdf

BUK7909-75ATE
BUK7909-75ATE

BUK7905-40AITrenchPLUS standard level FETRev. 01 9 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and TrenchPLUScurrent sensing.1.2 Features Integrated current sensor Standard level compatible.1.3 Applications Va

 8.5. Size:341K  philips
buk7105-40ate buk7905-40ate.pdf

BUK7909-75ATE
BUK7909-75ATE

BUK71/7905-40ATETrenchPLUS standard level FETRev. 01 20 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring both very low on-state resistance andTrenchPLUS diodes for temperature sensing and ESD protection.Product availability:BUK7105-40ATE in SOT426 (

 8.6. Size:326K  philips
buk7107-55aie buk7907-55aie.pdf

BUK7909-75ATE
BUK7909-75ATE

BUK71/7907-55AIETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7107-55AIE in SOT426 (D2-PAK)BUK

 8.7. Size:332K  philips
buk7108-40aie buk7908-40aie.pdf

BUK7909-75ATE
BUK7909-75ATE

BUK71/7908-40AIETrenchPLUS standard level FETRev. 02 24 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c

 8.8. Size:702K  nxp
buk7908-40aie.pdf

BUK7909-75ATE
BUK7909-75ATE

BUK7908-40AIEN-channel TrenchPLUS standard level FETRev. 03 17 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has b

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top