BUK7L06-34ARC Datasheet and Replacement
Type Designator: BUK7L06-34ARC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 34 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220AB
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BUK7L06-34ARC Datasheet (PDF)
buk7l06-34arc.pdf

BUK7L06-34ARCN-channel TrenchPLUS standard level FETRev. 05 17 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include internal gate resistors and TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protectio
buk7l11-34arc.pdf

BUK7L11-34ARCN-channel TrenchPLUS standard level FETRev. 05 17 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include internal gate resistors and TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protectio
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: FHD100N03A | 3SK103 | IXFH9N80 | HY5110A | IRFS9233 | PH3855L | RFD16N05SM
Keywords - BUK7L06-34ARC MOSFET datasheet
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History: FHD100N03A | 3SK103 | IXFH9N80 | HY5110A | IRFS9233 | PH3855L | RFD16N05SM



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