BUK7Y35-55B Datasheet and Replacement
Type Designator: BUK7Y35-55B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28.43 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: LFPAK
BUK7Y35-55B Datasheet (PDF)
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BUK7Y3R5-40HN-channel 40 V, 3.5 m standard level MOSFET in LFPAK568 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Feat
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BUK7Y38-100EN-channel 100 V, 38 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repe
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BUK7Y3R5-40EN-channel 40 V, 3.5 m standard level MOSFET in LFPAK5619 June 2015 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant Re
Datasheet: BUK7Y12-55B , BUK7Y13-40B , BUK7Y18-55B , BUK7Y18-75B , BUK7Y20-30B , BUK7Y25-40B , BUK7Y28-75B , BUK7Y33-100B , IRF730 , BUK7Y53-100B , BUK7Y54-75B , BUK9107-40ATC , BUK9107-55ATE , BUK9207-30B , BUK9209-40B , BUK9212-55B , BUK9213-30A .
History: AG10N60S
Keywords - BUK7Y35-55B MOSFET datasheet
BUK7Y35-55B cross reference
BUK7Y35-55B equivalent finder
BUK7Y35-55B lookup
BUK7Y35-55B substitution
BUK7Y35-55B replacement
History: AG10N60S



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