BUK9107-40ATC Specs and Replacement
Type Designator: BUK9107-40ATC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: D2PAK
BUK9107-40ATC substitution
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BUK9107-40ATC datasheet
buk9107-55ate buk9907-55ate.pdf
BUK91/9907-55ATE TrenchPLUS logic level FET Rev. 01 7 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability BUK9107-55ATE in... See More ⇒
buk9120-48tc 3.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT mode logic level field-effect power transistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 45 55 V suitable for surfa... See More ⇒
Detailed specifications: BUK7Y18-75B, BUK7Y20-30B, BUK7Y25-40B, BUK7Y28-75B, BUK7Y33-100B, BUK7Y35-55B, BUK7Y53-100B, BUK7Y54-75B, 7N60, BUK9107-55ATE, BUK9207-30B, BUK9209-40B, BUK9212-55B, BUK9213-30A, BUK9214-30A, BUK92150-55A, BUK9215-55A
Keywords - BUK9107-40ATC MOSFET specs
BUK9107-40ATC cross reference
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BUK9107-40ATC substitution
BUK9107-40ATC replacement
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