BUK9226-75A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9226-75A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 114
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 45
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0246
Ohm
Package:
DPAK
BUK9226-75A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9226-75A
Datasheet (PDF)
..1. Size:824K nxp
buk9226-75a.pdf
BUK9226-75AN-channel TrenchMOS logic level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu
7.1. Size:290K philips
buk9226 75a-01.pdf
BUK9226-75ATrenchMOS logic level FETRev. 01 10 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9226-75A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l
8.1. Size:966K nxp
buk9222-55a.pdf
BUK9222-55AN-channel TrenchMOS logic level FETRev. 02 1 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu
8.2. Size:970K nxp
buk9225-55a.pdf
BUK9225-55AN-channel TrenchMOS logic level FETRev. 02 7 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu
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