BUK9226-75A. Аналоги и основные параметры

Наименование производителя: BUK9226-75A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 114 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 75 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0246 Ohm

Тип корпуса: DPAK

Аналог (замена) для BUK9226-75A

- подборⓘ MOSFET транзистора по параметрам

 

BUK9226-75A даташит

 ..1. Size:824K  nxp
 buk9226-75a.pdf pdf_icon

BUK9226-75A

BUK9226-75A N-channel TrenchMOS logic level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 7.1. Size:290K  philips
 buk9226 75a-01.pdf pdf_icon

BUK9226-75A

BUK9226-75A TrenchMOS logic level FET Rev. 01 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9226-75A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 8.1. Size:966K  nxp
 buk9222-55a.pdf pdf_icon

BUK9226-75A

BUK9222-55A N-channel TrenchMOS logic level FET Rev. 02 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 8.2. Size:970K  nxp
 buk9225-55a.pdf pdf_icon

BUK9226-75A

BUK9225-55A N-channel TrenchMOS logic level FET Rev. 02 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

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