Справочник MOSFET. BUK9226-75A

 

BUK9226-75A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK9226-75A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 114 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0246 Ohm
   Тип корпуса: DPAK
     - подбор MOSFET транзистора по параметрам

 

BUK9226-75A Datasheet (PDF)

 ..1. Size:824K  nxp
buk9226-75a.pdfpdf_icon

BUK9226-75A

BUK9226-75AN-channel TrenchMOS logic level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

 7.1. Size:290K  philips
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BUK9226-75A

BUK9226-75ATrenchMOS logic level FETRev. 01 10 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK9226-75A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 8.1. Size:966K  nxp
buk9222-55a.pdfpdf_icon

BUK9226-75A

BUK9222-55AN-channel TrenchMOS logic level FETRev. 02 1 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

 8.2. Size:970K  nxp
buk9225-55a.pdfpdf_icon

BUK9226-75A

BUK9225-55AN-channel TrenchMOS logic level FETRev. 02 7 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF540S | OSG55R074HSZF | FDC654P | SPD04N60C3 | 2SK1501 | IXTH35N25MA | PNMET20V06E

 

 
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