BUK9230-100B PDF and Equivalents Search

BUK9230-100B N-channel TrenchMOS logic level FET Rev. 02 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feat... See More ⇒

isc N-Channel MOSFET Transistor BUK9230-55A FEATURES Drain Current I = 88A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Static Drain-Source On-Resistance R = 27m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

BUK9230-55A TrenchMOS logic level FET Rev. 02 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9230-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l... See More ⇒

BUK9237-55A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9237-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l... See More ⇒

BUK9237-55A N-channel TrenchMOS logic level FET Rev. 3 9 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur... See More ⇒