All MOSFET. BUK9230-100B Datasheet

 

BUK9230-100B MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK9230-100B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 47 A

Maximum Junction Temperature (Tj): 185 °C

Total Gate Charge (Qg): 33 nC

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: DPAK

BUK9230-100B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9230-100B Datasheet (PDF)

3.1. buk9230 55a-02.pdf Size:290K _philips

BUK9230-100B
BUK9230-100B

BUK9230-55A TrenchMOS logic level FET Rev. 02 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS1 technology, featuring very low on-state resistance. Product availability: BUK9230-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level compati

4.1. buk9237 55a-01.pdf Size:304K _philips

BUK9230-100B
BUK9230-100B

BUK9237-55A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS1 technology, featuring very low on-state resistance. Product availability: BUK9237-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level compati

 5.1. buk9214-30a.pdf Size:292K _philips

BUK9230-100B
BUK9230-100B

BUK9214-30A TrenchMOS logic level FET Rev. 01 20 March 2002 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS1 technology, featuring very low on-state resistance. Product availability: BUK9214-30A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level compatible

5.2. buk9245.pdf Size:296K _philips

BUK9230-100B
BUK9230-100B

BUK9245-55A TrenchMOS logic level FET Rev. 01 11 October 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS1 technology, featuring very low on-state resistance. Product availability: BUK9245-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level compatib

 5.3. buk9213-30a.pdf Size:276K _philips

BUK9230-100B
BUK9230-100B

BUK9213-30A TrenchMOS logic level FET Rev. 01 29 July 2002 Product data M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9213-30A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level compatible.

5.4. buk9219 55a-01.pdf Size:294K _philips

BUK9230-100B
BUK9230-100B

BUK9219-55A TrenchMOS logic level FET Rev. 01 24 October 2000 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS1 technology, featuring very low on-state resistance. Product availability: BUK9219-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level

 5.5. buk92150-55a 1.pdf Size:65K _philips

BUK9230-100B
BUK9230-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK92150-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 10.7 A the device features

5.6. buk9275 100a-01.pdf Size:286K _philips

BUK9230-100B
BUK9230-100B

BUK9275-100A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS1 technology, featuring very low on-state resistance. Product availability: BUK9275-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level compa

5.7. buk9226 75a-01.pdf Size:290K _philips

BUK9230-100B
BUK9230-100B

BUK9226-75A TrenchMOS logic level FET Rev. 01 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS1 technology, featuring very low on-state resistance. Product availability: BUK9226-75A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level compati

5.8. buk9240-100a.pdf Size:291K _philips

BUK9230-100B
BUK9230-100B

BUK9240-100A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS1 technology, featuring very low on-state resistance. Product availability: BUK9240-100A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic level compa

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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