BUK9230-100B. Аналоги и основные параметры

Наименование производителя: BUK9230-100B

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 167 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 15 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 47 A

Tj ⓘ - Максимальная температура канала: 185 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm

Тип корпуса: DPAK

Аналог (замена) для BUK9230-100B

- подборⓘ MOSFET транзистора по параметрам

 

BUK9230-100B даташит

 ..1. Size:812K  nxp
 buk9230-100b.pdf pdf_icon

BUK9230-100B

BUK9230-100B N-channel TrenchMOS logic level FET Rev. 02 1 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feat

 6.1. Size:259K  inchange semiconductor
 buk9230-55a.pdf pdf_icon

BUK9230-100B

isc N-Channel MOSFET Transistor BUK9230-55A FEATURES Drain Current I = 88A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Static Drain-Source On-Resistance R = 27m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 7.1. Size:290K  philips
 buk9230 55a-02.pdf pdf_icon

BUK9230-100B

BUK9230-55A TrenchMOS logic level FET Rev. 02 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9230-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

 8.1. Size:304K  philips
 buk9237 55a-01.pdf pdf_icon

BUK9230-100B

BUK9237-55A TrenchMOS logic level FET Rev. 01 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK9237-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Logic l

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