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CEM3053 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -15A, RDS(ON) = 7m @VGS = -10V. RDS(ON) = 15m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. ESD Protected 4000 V SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID -15 A Drain Current-Pulsed a IDM -60 A Maximum Power Dissipation PD 2.5 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 50 C/W This is preliminary information on a new product in development now . Rev 3. 2012.May Details are su... See More ⇒

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