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CEM3083 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -13A, RDS(ON) = 10m @VGS = -10V. RDS(ON) = 15.5m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID -13 A Drain Current-Pulsed a IDM -52 A Maximum Power Dissipation PD 2.5 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 50 C/W Rev 1. 2007.Jun. Details are subject to change without notice . http //www.cet-mos.com 1 CEM3083 Electrical Characteristics TA = 25 C... See More ⇒

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