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View 2n7051 detailed specification:

2N7051 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 12 V IC Collector Current 1.5 A TJ, TSTG Storage Temperature -55 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1. These rtings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle... See More ⇒

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