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View 2sd1047e detailed specification:

isc Product Specification isc Silicon NPN Power Transistor 2SD1047E DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 12 A C I Collector Current-Pulse 15 A CP Collector Power Dissipation P 100 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -40 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark ... See More ⇒

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