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View spd03n60c3 detailed specification:

isc N-Channel MOSFET Transistor SPD03N60C3,ISPD03N60C3 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 3.2 A D I Drain Current-Single Pulsed 9.6 A DM P Total Dissipation @T =25 38 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 3.3 Channel-to-ambient thermal resistance /W Rth(j-a) 75 1 isc website www.iscsemi.cn isc & iscsemi i... See More ⇒

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