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View 2n6660 2n6661 detailed specification:

2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0 1.5A 2N6660 90V 4.0 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information. vertical DMOS structure and Supertex s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the Features high input impedance and positive temperature coefficient inher- ent in MOS devices. Characteristic of all MOS structures, these Free from secondary breakdown devices are free from thermal runaway and thermally-induced Low power drive requirement secondary breakdown. Ease of... See More ⇒

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