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Ordering number EN8628 2SK3099LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3099LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 9 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 36 A 2.0 W Allowable Power Dissipation PD Tc=25 C35 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Enargy (Single Pulse) *1 EAS 92.6 mJ Avalanche Current *2 IAV 9 A *1 VDD=50V, L=2mH, IAV=9A *2 L 2mH, single pulse Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max D