Скачать даташит для 3n210_3n209:

3N209-3N210 DUAL GATE MOSFET VHF AMPLIFIER High-reliability discrete products and engineering services since 1977 FEATURES Available as HR (high reliability) screened per MIL-PRF-19500, JANTX level. Add HR suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding -PBF suffix. MAXIMUM RATINGS Rating Symbol Value Unit Drain source voltage VDS 25 Vdc VDG1 Drain gate voltage 30 Vdc VDG2 IG1R -10 IG1F 10 Gate current mAdc IG2R -10 IG2F 10 Drain current continuous ID 30 mAdc 3N209 3N210 Total power dissipation @ TA = 25 C PD mW 300 350 Derate above 25 C mW/ C 1.71 2.80 Storage channel temperature range Tstg -65 to 200 -65 to 175 C Operating channel temperature Tchannel 200 150 C Lead temperature, 1/16 from seated surface for 10 s 260 C ELECTRICAL CHARACTERISTICS (TC = 25 C)