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MSG50N350FH Features High Current Capability Low Saturation Voltage VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS Complaint Applications PDP TV Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 330 CES V Gate to Emitter Voltage V 30 GES T =25 100 C Collector Current I C T =100 50 A C Pulsed Collector Current TC=25 I 180 CM Diode forward current @ TC= 100 C I 30 A F Maximum Power Dissipation TC=25 328 P W D Maximum Power Dissipation TC=100 130 Operating Junction Temperature T -55 to 150 J Storage Temperature Range T -55 to 150 stg Maximum Lead Temp. for soldering T 300 L Purposes, 1/8 from case for 5 seconds Thermal Characteristics Parameter Symbol Typ Max Unit Thermal Resistance, Junction to Case R (IGBT) 0.38 JC /W Thermal Resistance, Junction to
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msg50n350fh.pdf Проектирование, MOSFET, Мощность
msg50n350fh.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
msg50n350fh.pdf База данных, Инновации, ИМС, Транзисторы
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