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MMBT5550 / MMBT5551 High Voltage Transistors NPN Silicon Package outline Features High collector-emitterbreakdien voltage. SOT-23 (BV = 140V 160V@I =1mA) CEO C This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Epitaxial planar die construction. Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex.MMBT5550-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) Mechanical data 0.108 (2.75) 0.083 (2.10) Epoxy UL94-V0 rated flame retardant Case Molded plastic, SOT-23 0.051 (1.30) Terminals Solder plated, solderable per 0.035 (0.89) MIL-STD-750, Method 2026 Mounting Position Any Weight Approximated 0.008 gram Dimensions in inches and (millimeters) o Maximum ratings (