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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC557, A, B, C BC558, A, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS Collector Emitter Voltage VCEO 65 45 30 V Collector Emitter Voltage VCES 80 50 30 V Collector Base Voltage VCBO 80 50 30 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 100 mA Collector Current Peak ICM 200 mA Base Current Peak IBM 200 mA Emitter Current Peak IEM 200 mA Power Dissipation at Ta=25 C PD 500 mW Derate Above 25 C 4.0 mW/ C Storage Temperature Tstg - 65 to +150 C Junction Temperature Tj 150 C THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 250 C