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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N P N silicon transistors Marking BSR13 = U7 BSR14 = U8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BSR13 BSR14 Collector base voltage (open emitter) VCB0 max. 60 75 V Collector emitter voltage (open base) VCE0 max. 30 40 V Emitter base voltage (open collector) VEB0 max. 5 6 V Collector current (d.c.) IC max. 800 mA Total power dissipation up to Tamb = 25 C Ptot max. 250 mW Junction temperature Tj max. 150 C D.C. current gain IC = 150 mA; VCE = 10 V hFE 100 to 300 IC = 500 mA; VCE = 10 V hFE > 30 40 = Transition frequency at f 100 MHz IC = 20 mA; VCE = 20 V fT > 250 300 MHz Continental Device India Limited Data Sheet Page 1 of 4 BSR13