Скачать даташит для cld667_a:

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CLD667, CLD667A TO-92 Plastic Package B C E Low Frequency Power Amplifier Complementary CLB647/CLB647A ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL CLD667 CLD667A UNITS VCBO Collector Base Voltage 120 120 V VCEO Collector Emitter Voltage 80 100 V VEBO Emitter Base Voltage 5.0 V Collector Current IC 1.0 A Collector Current Peak ICP 2.0 A PC Collector Power Dissipation 0.9 W Tj Junction Temperature 150 C Storage Temperature Tstg - 55 to +150 C ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION CLD667 CLD667A UNITS Collector Base Voltage VCBO IC=10 A, IE=0 >120 >120 V Collector Emitter Voltage VCEO IC=1mA, IB=0 >80 >100 V Emitter Base Voltage V