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CMUT5551 www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMUT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE 55C SOT-523 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 600 mA Power Dissipation PD 250 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 C Thermal Resistance JA 500 C/W ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=120V 50 nA ICBO VCB=120V, TA=100 C 50 A BVCBO IC=100 A 180 V BVCEO IC=1.0mA 160 V BVEBO IE=10 A 6.0 V VCE(SAT) IC=10mA, IB=1