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CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 16 V Drain Current-Continuous @ TC = 25 C A 52.4 ID @ TC = 100 C 37 A Drain Current-Pulsed a IDM 210 A Maximum Power Dissipation @ TC = 25 C 120 W PD - Derate above 25 C 0.8 W/ C Operating and Store Temperature Range TJ,Tstg -65 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 1.24 C/W Thermal Resistance, Junct