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CEP93A3/CEB93A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 150A, RDS(ON) = 3.0 m @VGS = 10V. RDS(ON) = 6.0 m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Drain Current-Continuous@ TC = 25 C 150 A ID @ TC = 100 C 102 A Drain Current-Pulsed a IDM 600 A Maximum Power Dissipation @ TC = 25 C 120 W PD - Derate above 25 C 0.8 W/ C Single Pulsed Avalanche Energy d EAS 648 mJ Single Pulsed Avalanche Current d IAS 36 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol