Скачать даташит для ss8550-l_ss8550-h_ss8550-j:

SS8 550 TRANSISTOR(PNP) FEATURES SOT 23 High Collector Current Complementary to SS8050 MARKING Y2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -40 V CBO 3. COLLECTOR V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO IC Collector Current -1.5 A P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To Ambient 417 /W JA T Junction Temperature 150 j T Storage Temperature -55 +150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100 A, I =0 -40 V (BR)CBO C E Collector-emitter breakdown voltage V I =-1mA, I =0 -25 V (BR)CEO C B Emitter-base breakdown voltage V(BR)EBO IE=-100 A, IC=0 -5